vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 1 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 4 a features ? ultrafast recovery time ? ultrasoft recovery ? very low i rrm ? very low q rr ? guaranteed avalanche ? specified at operating temperature ? compliant to rohs directive 2002/95/ec ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description/applications these diodes are optimized to reduce losses and emi/rfi in high frequency power cond itioning systems. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. product summary package d-pak (to-252aa) i f(av) 4 a v r 600 v v f at i f 1.8 v t rr typ. 17 ns t j max. 150 c diode variation single die anode 1 3 2, 4 n/c d-pak (to-252aa) absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v rrm 600 v maximum continuous forward current i f(av) t c = 100 c 4 a single pulse forward current i fsm 25 repetitive peak forward current i frm t c = 116 c 16 maximum power dissipation p d t c = 100 c 10 w operating junction and storage temperatures t j , t stg - 55 to 150 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage see fig. 1 v f i f = 4 a - 1.5 1.8 i f = 8 a - 1.8 2.2 i f = 4 a, t j = 125 c - 1.4 1.7 maximum reverse leakage current i r v r = v r rated - 0.17 3.0 a t j = 125 c, v r = 0.8 x v r rated - 44 300 junction capacitance c t v r = 200 v - 4 8 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 2 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/a, v r = 30 v - 17 - ns t j = 25 c i f = 4 a di f /dt = 200 a/s v r = 200 v -2842 t j = 125 c - 38 57 peak recovery current i rrm t j = 25 c - 2.9 5.2 a t j = 125 c - 3.7 6.7 reverse recovery charge q rr t j = 25 c - 40 60 nc t j = 125 c - 70 105 rate of fall of recovery current di (rec)m /dt t j = 25 c - 280 - a/s t j = 125 c - 235 - thermal - mechanical specifications parameter symbol test conditi ons min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 150 c thermal resistance, junction to case r thjc --5.0 c/w thermal resistance, junction to ambient r thja typical socket mount - - 80 weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf ? in) marking device case style d-pak hfa04sd60s
vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 3 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 125 c t j = 25 c 0 6 2 3 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 14 0.1 5 0.01 0.1 1 10 100 0 100 200 v r - reverse voltage (v) i r - reverse current (a) t j = 150 c t j = 125 c t j = 25 c 0.001 1000 300 500 400 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single pulse (thermal resistance) p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 4 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 50 40 20 100 1000 di f /dt (a/s) t rr (ns) 30 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 14 10 0 100 1000 di f /dt (a/s) i rr (a) 4 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 2 6 8 12 200 160 20 100 1000 di f /dt (a/s) q rr (nc) 60 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 40 80 120 180 100 140 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a
vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 5 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-hfa04sd60spbf www.vishay.com vishay semiconductors revision: 14-jun-11 6 document number: 94034 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95059 packaging information www.vishay.com/doc?95033 2 - hexfred ? family 3 - electron irradiated 4 - current rating (04 = 4 a) 5 - d-pak 6 - voltage rating (60 = 600 v) 7 - s = d-pak 8 - tr = tape and reel trr = tape and reel (right oriented) trl = tape and reel (left oriented) device code 5 1 3 2 4 6 7 8 9 hf vs- a 04 sd 60 s tr pbf 1 - vishay semiconductors product 9 - pbf = lead (pb)-free p = lead (pb)-free (for trr and trl)
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
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